EGUCHI Toshimasa | Technology Research Association for Advanced Display Materials (TRADIM)
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概要
- EGUCHI Toshimasaの詳細を見る
- 同名の論文著者
- Technology Research Association for Advanced Display Materials (TRADIM)の論文著者
関連著者
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EGUCHI Toshimasa
Technology Research Association for Advanced Display Materials (TRADIM)
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TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
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Yamaguchi Hirotaka
Nec Lcd Technologies Ltd.
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Kaneko Setsuo
Nec Lcd Technologies Ltd.
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Nakata Mitsuru
Technology Research Association For Advanced Display Materials (tradim)
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Tokumitsu Eisuke
Tokyo Institute Of Technology
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OTSUKI Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM)
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FUJISAWA Katsuya
Kuraray Co., Ltd.
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Sanai Yasuyuki
Toagosei Co. Ltd.
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NAGASAWA Atsushi
Technology Research Association for Advanced Display Materials (TRADIM)
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Fujisawa Katsuya
Kuraray Co. Ltd.
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Tokumitsu Eisuke
Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Otsuki Shigeyoshi
Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan
著作論文
- Ultra Slim and Bendable Backlight System with a Unified Component for Liquid Crystal Display Applications
- Flexible High-Performance Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer Laser Annealing
- Study on Current Crowding in the Output Characteristics of Amorphous InGaZnO4 Thin-Film Transistors Using Dual-Gate Structures with Various Active-Layer Thicknesses
- Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
- Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
- Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
- Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors
- Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering