Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
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概要
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We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si:H) TFTs. It is shown that the UV illumination induces a much more significant threshold voltage ($V_{\text{t}}$) decrease and OFF-current increase for the a-IGZO TFTs than for the a-Si:H TFTs. The significant $V_{\text{t}}$ decrease is found to take several tens of min to return to the initial state after switching off the UV light. A qualitative model is introduced to explain the photoresponse unique to the a-IGZO TFTs.
- 2009-01-25
著者
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TAKECHI Kazushige
Technology Research Association for Advanced Display Materials (TRADIM)
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Yamaguchi Hirotaka
Nec Lcd Technologies Ltd.
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Kaneko Setsuo
Nec Lcd Technologies Ltd.
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Nakata Mitsuru
Technology Research Association For Advanced Display Materials (tradim)
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EGUCHI Toshimasa
Technology Research Association for Advanced Display Materials (TRADIM)
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