Super-Resolution Readout of 50 nm Read-Only-Memory Pits Using Optics Based on High-Definition Digital Versatile Disc
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概要
- 論文の詳細を見る
A super-resolution near-field structure (super-RENS; ZnS–SiO2/Sb75Te25/ZnS–SiO2) and a read-only-memory (ROM) substrate with its pit wide in the radial direction (200 nm) are combined. The readout of 50-nm-long pits was examined, and the pit length is less than one third the resolution limit of the optics (laser wavelength: 405 nm, numerical aperture: 0.65) used. The carrier-to-noise ratio obtained was 39 dB, and it was possible to observe the reproduced waveform clearly. The results indicate that the capacity along the tangential direction can be increased by a factor of 4.
- 2008-07-25
著者
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NAKANO Takashi
Center for Applied Near-Field Optics Research (CAN-FOR), National Institute of Advanced Industrial S
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Shima Takayuki
Center For Applied Near-field Optics Research (can-for) Aist
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Kurihara Kazuma
Center For Applied Near-field Optics Research (can-for) National Institute Of Advanced Industrial Sc
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Kim Jooho
Digital Media R&d Center Samsung Electronics Co. Ltd.
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Tominaga Junji
Center for Applied Near Field Optics Research (CAN-FOR), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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