Phase Change Super Resolution near Field Structure ROM
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概要
- 論文の詳細を見る
We confirmed a super resolution phenomenon and a typical super resolution near field structure threshold phenomenon in a read only memory (ROM)-type sample disk. We found that this super resolution phenomenon originates from a phase-change layer and is closely related to the thermal properties of the super resolution layer. We also improved the readout stability using a co-sputtered layer with phase change (GST) and dielectric materials (ZnS-SiO2).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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Kim Jooho
Digital Media R&d Center Samsung Electronics Co. Ltd.
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Lee Jinkyung
Digital Media R&d Center Samsung Electronics Co. Ltd
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Park Insik
Digital Media R&d Center Samsung Electronics Co. Ltd
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Hwang Inoh
Digital Media R&d Center Samsung Electronics Co. Ltd.
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Ro Myongdo
Digital Media R&D Center, SAMSUNG ELECTRONICS CO., LTD, Suwon 442-742, Korea
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Park Changmin
Digital Media R&D Center, SAMSUNG ELECTRONICS CO., LTD, Suwon 442-742, Korea
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Lee Jinkyung
Digital Media R&D Center, SAMSUNG ELECTRONICS CO., LTD, Suwon 442-742, Korea
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Kim Hyunki
Digital Media R&D Center, SAMSUNG ELECTRONICS CO., LTD, Paldal-Gu, Suwon, 442-742, Korea
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Jung Moonil
Digital Media R&D Center, SAMSUNG ELECTRONICS CO., LTD, Suwon 442-742, Korea
関連論文
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- Phase Change Super Resolution near Field Structure ROM
- Super-Resolution Near-Field Structure with Alternative Recording and Mask Materials