Electrical Properties of Heat-Treated C60 Field Effect Transistor Prepared on Polyimide Gate Insulator
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概要
- 論文の詳細を見る
Fullurence (C60)-based n-channel field effect transistors (FETs) have been fabricated on polyimide gate insulators as an alternative to conventional oxide gate insulators. The field effect mobility $\mu_{\text{e}}$ of C60 FET was improved to higher than 0.1 cm2 V-1 s-1 by heat treatment at 160 °C. This improvement was attributed to the de-doping of oxygen molecules, which were adsorbed by short-term exposure to air during sample transfer. The C60 films deposited on polyimide become amorphous even after the heat treatment or heating the sample during deposition. On the other hand, the crystalline phase of C60 appears when the films were deposited on pentacene-coated polyimide. Both the field effect mobility and the conductance of bulk C60 were increased markedly by the insertion of an ultrathin pentance layer between C60 and the polyimide gate insulator.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Itoh Eiji
Department Of Bioresources Science Faculty Of Agriculture Kochi University
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Miyairi Keiichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Miyairi Keiichi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Higashimoto Yusuke
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Itoh Eiji
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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