Evaluation of Hydrogen in Tantalum Thin Films Using Secondary Ion Mass Spectrometry
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概要
- 論文の詳細を見る
The hydrogen distribution in tantalum and tantalum oxide thin films has been examined by secondary ion mass spectrometry (SIMS). Tantalum and tantalum oxide thin films implanted with deuterium were analyzed by conventional SIMS. Metal–insulator–metal (MIM) devices were analyzed by backside SIMS. The results of these measurements show that the hydrogen distribution is concentrated on the front side in tantalum films, while the hydrogen distribution in tantalum oxide films is not affected by SIMS measurement. A model has been proposed to explain the cause of an anomalous hydrogen peak forming at the interface between the tantalum oxide and tantalum films in the MIM devices. In the model, when the tantalum oxide film covering the tantalum film is removed by primary ion beam sputtering, hydrogen atoms in the tantalum film are quickly discharged to a vacuum in a sample chamber and the anomalous hydrogen peak is detected.
- 2008-01-25
著者
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Miyairi Keiichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Denda Satoshi
Seiko Epson Corporation, 281 Fujimi, Fujimii, Suwa, Nagano 399-0293, Japan
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Asakawa Tsutomu
Seiko Epson Corporation, 281 Fujimi, Fujimii, Suwa, Nagano 399-0293, Japan
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Nagano Daisuke
Seiko Epson Corporation, 281 Fujimi, Fujimii, Suwa, Nagano 399-0293, Japan
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