Quantitative Estimation of Aluminum-Induced Negative Charge Region Top Area of SiO2 Based on Frequency-Dependent AC Surface Photovoltage
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概要
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Most aluminum (Al) in Al-contaminated and thermally oxidized n-type silicon (Si) dioxide (SiO2) is clarified to be segregated at the very top area of SiO2, causing a negative charge, as has been suggested by the formation of an (AlOSi)- network and/or AlO2- based on AC surface photovoltage (SPV). For a strongly inverted state at an oxidation temperature of 800 °C for 1 h, the thickness of the Al-induced negative charge region is quantitatively determined to be 2.4 nm on the basis of AC SPV after successive step etching and chemical analysis. As oxidation duration increased at 800 °C for 3 h, the strongly inverted state changed into a weakly inverted state, where the thickness of the Al-rich region is reduced (0.8 nm), proving that more than half of the (AlOSi)- network collapse and/or Al diffuses inside SiO2 during a longer oxidation duration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-11-15
著者
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Shimizu Hirofumi
Department Of Electrical And Electronic Engineering College Of Engineering Nihon University
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Ikeda Masanori
Department Of Electrical And Electronic Engineering College Of Engineering Nihon University
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Ishikawa Takuma
Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Tamura-machi, Koriyama, Fukushima 963-8642, Japan
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Wakashima Hiroya
Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Tamura-machi, Koriyama, Fukushima 963-8642, Japan
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Wakashima Hiroya
Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan
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Ikeda Masanori
Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Tamura-machi, Koriyama, Fukushima 963-8642, Japan
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