Enhanced and Retarded SiO

概要

論文の詳細を見る
At the beginning of the oxidation of Fe-contaminated n-type Si(001) surfaces, Fe reacted with oxygen (O<inf>2</inf>) on the silicon (Si) substrate to form Fe<inf>2</inf>O<inf>3</inf>and oxygen-induced point defects (emitted Si + vacancies). SiO<inf>2</inf>growth was mainly enhanced by catalytic action of Fe. At 650 °C, SiO<inf>2</inf>growth of the contaminated samples was faster than in reference samples rinsed in RCA solution during the first 60 min. However, it substantially slowed and became less than that of the reference samples. As the oxidation advanced, approximately half of the contaminated Fe atoms became concentrated close to the surface area of the SiO<inf>2</inf>film layer. This Fe<inf>2</inf>O<inf>3</inf>-rich SiO<inf>2</inf>layer acted as a diffusion barrier against oxygen species. The diffusion of oxygen atoms toward the SiO<inf>2</inf>/Si interface may have been reduced, and in turn, the emission of Si self-interstitials owing to oxidation-induced strain may have been decreased at the SiO<inf>2</inf>/Si interface, resulting in the retarded oxide growth. These results are evidence that emitted Si self-interstitials are oxidized not in the Fe<inf>2</inf>O<inf>3</inf>-rich SiO<inf>2</inf>layer, but at the SiO<inf>2</inf>/Si interface in accordance with a previously proposed model. A possible mechanism based on the interfacial Si emission model is discussed. The activation energies for the oxide growth are found to be in accord with the enhanced and reduced growths of the Fe-contaminated samples.
2013-04-25

Enhanced and Retarded SiO

スポンサーリンク

概要

著者

関連論文

スポンサーリンク