Kinetics of Ultrathin Thermal Oxide Growth on Si(001) Surfaces

概要

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The oxidation kinetics and the effect of aluminum (Al) on the surface oxidation of silicon (Si) (001) in the temperature range from 600 to 900°C in a dry oxygen ambient have been investigated using spectroscopic ellipsometry and X-ray photoelectron spectroscopy. A nonlinear dependence of the thermal oxidation rate on temperature was observed at 760°C. At temperatures lower than 760°C, the activation energy was determined to be 0.27–0.57 eV for the first and/or second atomic layer of Si. The activation energy above 760°C was found to be 1.47–1.60 eV, approaching the value of bulk oxidation (${\sim}2$ eV), implying that the SiO2–Si interface moves deeper. It was found that the inclusion of Al reduces the oxide growth by 20 to 30% of that obtained on "clean" oxide. A schematic illustration that takes into account the mechanism by which a thin Al rich layer inhibits oxygen diffusion is presented.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-02-15