Structural Studies of V2O5 Nanowires by Ultrahigh Vacuum-Scanning Tunneling Microscope and Atomic Force Microscope
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概要
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We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a sol–gel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current–voltage ($I$–$V$) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of $10\times 1.5$ nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting $I$–$V$ characteristics. The height of the V2O5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100 °C, implying the existence of a water interlayer in the V2O5 double-layer structure.
- 2006-03-15
著者
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Lee Hyeong
Department Of Chemistry Pohang University Of Science And Technology
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Ha Jeong
Department Of Chemical And Biological Engineering Korea University
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Kim Gyu
Department Of Electrical Engineering Korea University
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Kim Yong
Department And Research Institute Of Rehabilitation Medicine Yonsei University College Of Medicine
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Park Sung
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Kim Gyu
Department of Electrical Engineering, Korea University, Seoul 136-701, Korea
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Ha Jeong
Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
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Lee Hyeong
Department of Electrical Engineering, Korea University, Seoul 136-701, Korea
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