Er3+ Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere
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概要
- 論文の詳細を見る
We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si–Si, SiOx, and SiO2) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er3+ ions was strongly dependent on the amount of the Si–Si phase in the SRSO:Er films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Bae Chang
Department Of Chemistry Kyung Hee University
-
Ha Jeong
Department Of Chemical And Biological Engineering Korea University
-
Yoo Keon
Department Of Pediatrics Samsung Medical Center Sungkyunkwan University School Of Medicine
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Jeon Ji
Department Of Chemistry Kyunghee University
-
Nam Sang
Department Of Biochemistry College Of Pharmacy Kyung-hee University
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Jang Young
Department Of Aerospace And Mechanical Engineering Rok Air Force Academy
-
Park Seung
Department Of Anatomy College Of Medicine Konkuk University
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Nam Sang
Department of Chemistry, Kyunghee University, Seoul 130-701, Korea
-
Yoo Keon
Department of Physics, Kyunghee University, Seoul 130-701, Korea
-
Park Seung
Department of Chemistry, Kyunghee University, Seoul 130-701, Korea
-
Ha Jeong
Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
-
Bae Chang
Department of Chemistry, Kyunghee University, Seoul 130-701, Korea
-
Jeon Ji
Department of Chemistry, Kyunghee University, Seoul 130-701, Korea
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