Preparations and Evaluations of C60 Thin Films for Organic Field-Effect Transistors

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Fullerene C60 thin films were grown on a mica top-gate-type substrate and on a $\text{CaF$_{2}$}\parallel\text{Si(111)}$ bottom-gate-type substrate with the aim of fabricating high-performance organic field-effect transistors (FETs). It is expected that single-crystal C60 thin films with a large grain have a high mobility as n-type materials because of the lack of a potential barrier at the grain boundaries for conducting electrons. On both substrates, oriented C60 films were obtained. In particular, on the mica substrate, the highly oriented films had grains larger than $1\times 1$ μm and a two-dimensionally flat surface with 60 and 120 deg facets. The step height was 0.8 nm, consistent with that of an $hcp$ bulk structure. The highly oriented films were grown at the substrate temperature at which the C60 molecules at the tips of spiral grains re-evaporated. The obtained single-crystal C60 thin films with large grains are promising for high-performance organic FETs.
2005-01-15