Growth of ZnO Thin Films on LiNbO3 Substrates by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
In this paper, we describe the growth of high-quality ZnO heteroepitaxial films on LiNbO3 (0001) substrates by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The quality of these films is analyzed by means of X-ray diffraction, pole figure of X-ray diffraction, and reflection high-energy electron diffraction (RHEED). The FWHM value of the (002) rocking curve for the 0.3-µm-thick films grown at 250°C was 0.45°. The pole figure of X-ray diffraction studies revealed that the films were epitaxial with a 30° rotation of the unit cell with respect to LiNbO3 in the (0001) basal plane. The lattice mismatch between [\=12\=10]ZnO and [\=1100]LiNbO3 was about 8.3%, which is smaller than that (∼16%) of ZnO film on sapphire (0001) that is widely used as a substrate. The growth of ZnO films on interdigital transducers (IDTs)/LiNbO3 was also studied. The films deposited over the bare LiNbO3 area between finger electrodes were single crystalline, while the films deposited over the Cr-Au finger electrodes were polycrystalline.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-09-30
著者
-
Kang Hee-bog
Department Of Electrical And Communication Engineering Graduate School Of Engineering Tohoku Univers
-
Nakamura Kiyoshi
Department Of Chemistry Faculty Of Science Shinshu University
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Yoshida Kenji
Department of Biochemistry, Kinki University School of Medicine
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Kang Hee-Bog
Department of Electrical and Communication Engineering, Graduate School of Engineering, Tohoku University, Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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