新しい昇温脱離ガス分析装置の開発とVLSI材料及びプロセス評価への応用

概要

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Ultra-high-vacuum thermal desorption mass spectroscopy has been newly constructed for VLSI material and processes characterization. A combination of the load-lock system and direct heating method using an external infraed lamp enabled rapid measurements (typically less than 1 hour/sample) and accurate ramp heating ranging from 6 to 300 deg/min, up to 850°C without significant background increases. The detection limit of desorbed gas was found to be approximately 1/20 monolayer on Si surfaces even for H2 and H2O. Its applicability to VLSI Characterization has been demonstrated by studying the outgassing and chemical structures of interdielectric films, surface structures of cleaned Si wafers, and CF4/CHF3 plasma-exposed Si surfaces. It is concluded that this system has the potential to play a key role in not only surface analysis but also the development and optimization of VLSI materials and processes.
日本真空協会の論文