高スピン偏極率を有するホイスラー合金/MgO界面の理論設計(スピンエレクトロニクス)

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We investigate and discuss electronic structures and tunneling conductance of magnetic tunnel junctions (MTJs) with the Co_2CrGa and MgO on the basis of the density-functional first-principles calculations. We found that the CrGa-terminated Co_2CrGa/MgO (001) junction has no interface states and preserves the high spin-polarization of Co_2CrGa at the interface. We showed that the large enhancement of the interfacial Cr spin moment plays an important role to make the half-metallic gap in the CrGa-terminated Co_2CrGa/MgO(001) interface. Finally, we have proposed that addition of an ultrathin Co_2CrGa layer between Co_2MnSi electrode and MgO barrier is effective to eliminate interface states in both sides of the junction with preserving the coherent tunneling through the Δ_1 channel of the MTJ in parallel magnetization.
社団法人日本磁気学会の論文
2009-03-01