新しい高スピン偏極強磁性材料の理論設計

概要

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Highly spin-polarized materials have been attracting increasing interest, since they are expeded to improve the efficiency of magnetoelectronic (or spintronic) devices, such as magnetic sensors and magnetic random-access-memories. We explored theoretically new perfectly spin-polarized (so-called half-metallic) ferromagnets compatible with III-V semiconductors, using first-principles electronic band-structure calculations.The magnitude of the magnetic coupling and the degree of the spin-polarization at the highest occupied electronic energy-level (Fermi-level) were evaluated systematically for 3d transition-metal monopnictides having the zinc-blende crystal structure. It was found that both zinc-blende CrAs and CrSb are perfectly spin-polarized ferromagnets with transition temperatures much higher than room temperature. They are thus promising materials for future spintronic device applications.
社団法人日本磁気学会の論文
2003-06-01