CdSe薄膜トランジスタの製作諸条件II

概要

論文の詳細を見る
Fabrication conditions such as CdSe deposition temperature and electrode material which are necessary to obtain a thin film transitor (TFT) having an excellent characteristic were investigated in detail.　These studies have shown that the deposition temperature of CdSe had a suitable range of 650-800℃ independent of substrate temperature, while the film thickness and the deposition rate of CdSe were independent of the transconductance (Gm) characteristics, and that the SiO film caused the surface conductivity of the TFT to increase remarkably. A technicai difficulty in the deposition was in a preventive method of the electrical short between source and drain metal films and a masking technique using in the deposition of source and drain films had an influence on the number of TFT exhibiting a normal performance. Metal-CdSe contact was also investigated experimentally by using three type Metal-CdSe-Metal thin film diodes, however, it was still remain unknown due to complexities of the diode phenomena.
山形大学の論文
1968-01-20