薄膜トランジスタの圧電特性

概要

論文の詳細を見る
The use of piezoelectric materials, such as CdS and CdSe, for the semiconductor layer of the thin film transistor (TFT) makes possibie to fabricate a stress sensitive active device. In this paper, it is described that increase of the drain current level of CdSe TFT was observed with the static strain of the elongation mode, but decrease with the compression mode strain, and it is also shown that the drain characteristics of the TFT were modulated by the dynamic stress given on the TFT using vibration of the piezoelectric ceramics sticked on the under surface of the glass substrate. Nearly linear increase of the drain current for the static strain from 2 X 10^-4 up to 6 x 10^-4 was seen and drain current increase of 79 percent was obtained at the strain of 5.6 X 10^-4.
山形大学の論文
1968-01-20