アルミニウム蒸着薄膜のプラズマ陽極酸化

概要

論文の詳細を見る
This paper presents the formation technique and the electrical property of aluminum oxide by gaseous plasma anodization. This anodic process can be incorporated with mother metal deposition and counter electrode metal deposition, thereby it is advantageous to minimize contamination possibilities. Plasma is formed by a continuous discharge of oxygen gas in a bell jar at 1 Torr pressure.　An oxide film is formed during an hour on the surface of deposited aluminum film which is positioned in the plasma region. The growth of oxide thickness is a function of the anodizing voltage which is applied between aluminqm film and discharge anode, and its growth rate of oxide thickness is 5-10A per volt. Electrical properties such as breakdown voltage and leakage resistivity of the oxide film are also examined.
山形大学の論文
1969-03-20