テルル薄膜トランジスタ

概要

論文の詳細を見る
Some preliminary studies to form Te TFT having fine characteristics are described Voltage-current characteristics of coplanar diodes made of deposited Te and metal films show that Co, Ni, Au and In make good ohmic contact to Te film and seem to be suitable to the source-drain electrode while Al or Cr makes blocking contact.　Investigation on Hall mobility of Te film of a thickness range of 200-2000Å exhibits that the mobility increases with film thickness from about 2 up tO 20 cm^2/v sec.　The T^ temperature dependence of Hall mobility exhibits the ion scattering is dominant below 70℃. Increase of Hall mobility by the application of gate field is observed as seen in the case of CdSe film.　Te TFT's have been formed on glass substrate depositing Au, Co, or Al source-drain electrode, 170-180Å Te layer, SiO insulator layer of 1000Å thickness and Al gate electrode in order. Mutual conductance of Te TFT is 200-1880μυ for the Au and Co electrodes, but very small Gm and large hysteresis for Ai source-drain electrode.
山形大学の論文
1969-03-20