蒸着したTe-SiOの界面準位密度

概要

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Al-S_iO-Te-Au MIS structures were formed by vacuum evaporation on a slide glass in order to estimate the density of the interface states between the semiconducting layer and the insulating layer using the technique proposed by Gray and Brown.　Temperature dependence of the flat band voltage of MIS capacitace was measured and the Fermi energy of Te was calculated as the function of the temperature.　From the data described above, the interface states density of about 2 - 3 X 10^ cm^(-2)・ev^(-1) was estimated to be located near the valence band edge of the evaporated Te.
山形大学の論文
1972-01-20