薄膜トランジスタの動的圧電特性に関する実験

概要

論文の詳細を見る
In this paper, it is emphasized that CdSe thin film transistor (TFT) may be used as a functional device having the faculty of both the electro-mechanical transducer of high sensitivity and the ordinary amplifier.　Our results showed that the drain current level of TFT was modulated by the dynamic stress given on the glass substrate of TFT, using ultrasonic horn vibrating at the frequency of 20.0 KHz.　The maximum drain current modulation observed was 81% at the vibration displacement ”d” of 8 microns at the tip of this horn impinging on the center of the substrate.　Metal-SiO-CdSe-Metal thin film capacitor stressed dynamically showed sinusoida out put voltage of 4.2 mV by the piezoelectric effect of CdSe at ”d” of 7.4 microns.　From these results, it was confirmed experimntally that the modulation mechanism of the drain current of the TFT was attributed to the variation ΔVo of gate-offset voltage Vo due to the applied dynamic stress.
山形大学の論文
1969-03-20