DLTS法によるSiCショットキダイオードの電子トラップの評価(工学部:電気学科電気工学専攻・電子工学専攻・情報通信工学専攻)

概要

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Electron traps in commercially available SiC Schottky diodes have been characterized by deep level transient spectroscopy (DLTS). Two discrete DLTS peaks corresponding to the energy levels of EC - 0.16 and 0.67 eV are observed in addition to broader signals with deeper energy levels. The EC - 0.16 and 0.67 levels are identified as the Cr impurity and Z1 center, respectively. A 140% increase in concentration for the Z1 center is found by the 2.5 A forward current stress for 1200 min. The broader signals are resolved by isothermal DLTS and are found to consist of five components with the emission activation energies ranging from 0.71 to 0.85 eV. These five components show the filling pulse width dependence in the s range
愛知工業大学の論文
2005-03-31