Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
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概要
- 論文の詳細を見る
Most semiconductor crystals are transparent for infrared rays but some of them are difficult to study by X-ray methods if they are composed of heavy elements. An infrared light scattering tomography, which is developed in this paper to characterize semiconductor crystals, successfully gives clear images of micro-defects in a heat-treated Si crystal and dislocation networks in a GaAs crystal grown by a horizontal Bridgman method.
- 社団法人応用物理学会の論文
- 1983-04-20
著者
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Ogawa Tomoya
Department of Physics, Gakushiuin University
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Ogawa Tomoya
Department Of Physics Gakushuin University
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Ogawa Tomoya
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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MORIYA Kazuo
Department of Physics, Gakushuin University
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Moriya Kazuo
Department Of Physics Gakushuin University
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OGAWA Tomoya
Department of Physics, Gakushuin University
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