A Study on IR Light Intensities Scattered from Defects in an Indum-Doped Liquid Encapsulaled Czochralski GaAs Crystals as Functions of Wavelength and Intensity of Bias Light Superposed on the Defects
スポンサーリンク
概要
- 論文の詳細を見る
IR light intensity scattered from particles precipitated on dislocations in an indium-doped GaAs crystal is studied by superposing monochromatic light as a bias. The bias light makes clear change of the scattered intensity at 1050 nm and 1290 nm which coincides with the energy levels of EL2 observed by the photoluminescence method. The experimental results indicate that the precipitates on dislocation lines are a Type of EL2 defect.
- 社団法人応用物理学会の論文
- 1992-09-15
著者
-
Ogawa T
Aset Euvl Lab. Kanagawa Jpn
-
Sakai Kazufumi
Department Of Mathematics And Physics National Defense Academy
-
Sakai Kazufumi
Department Of Physics Gakushuin University
-
Ogawa Tomoya
Department of Physics, Gakushiuin University
-
Ogawa Tomoya
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
-
HASHIMOTO Ryuichi
Department of Physics, Gakushuin University
-
Hashimoto Ryuichi
Department Of Physics Gakushuin University
-
HASHIMOTO RYUICHI
Department of Internal Medicine, Kurume University School of Medicine
関連論文
- A New, Simple Arrangement for Conoscopic Figures
- A Study on IR Light Intensities Scattered from Defects in an Indum-Doped Liquid Encapsulaled Czochralski GaAs Crystals as Functions of Wavelength and Intensity of Bias Light Superposed on the Defects
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
- Correlation between Infrared-Light Scattering and Absorption Images in an In-Doped LEC GaAs Crystal
- A Comment on Defects in GaAs Crystals Observed by Infrared Light Scattering Tomography and IR Absorption Microscopy
- B-10-5 Synthesis of Substances related to Gibberellins(Terpenoids)
- Measurement of Stress near Dislocation Walls in a ZnSe Signal Crystal by Raman Scattering Tomography
- X-Ray Diffraction Microscopy by an Electronic Streak Camera System : Techniques, Instrumentations and Measurement
- Electrical Conductivity Measurement by Acoustic Attenuationin Semi-Insulating GaAs Crystals
- Effect of Depolarization Field on Electro-Elastic Properties of Photoconductive CdS Crystals (Experimental)
- Dependence of Piezoelectric Constant of Evaporated CdS Thin Films upon Their Deposition Rate
- Anelasticity in an Mn-Ferrite Single Crystal
- Origin of the High Field Domains in Piezoelectric Semiconductors : A phenomenological Theory
- Raman Scattering and Photoluminescence Tomography : Techniques, Instrumentations and Measurement
- A Linear Chain Model for Piezoelectricity in Zincblende and Wurtzite Type Crystals
- Some New Aspects of the Anomalous Photovoltaic Effect in ZnS Crystals
- A Phenomenological Analysis of Crystal Growth from Solutions as an Irreversible Proeess
- Acoustic Losses in Single Crystals of Mn-Zn Ferrite and Titanium Substituted Mn-Zn Ferrites
- Effect of Depolarization Field on Electromechanical Properties of Piezoelectric Semiconductors (Theory)
- Decrement of Piezoelectric Constants Caused by Screening Effect of Conduction Electrons on the Effective Charge of CdS Crystals
- New Interference Fringes Generated by Epitaxial Layers of Semiconductors and SIMOX (Oxygen-Ion-Implanted-Si) Wafers
- Characterization of Epitaxially Grown Semiconductive Layers by Scattering of Optical Pseudo-Surface Waves and Interference Fringes due to Guided Waves within the Layers
- Determination of Tiny Scatterer's Shape by Light Scattering Tomography
- 5th Rank Piezoelectric Tensors in Tellurium Single Crystals
- A Proposal for Measurement of Implanted Ion Dose in Semiconductor Wafers by IR Light Scattering Technique : Semiconductors and Semiconductors Devices
- Improvements in Quadriceps Force and Work Efficiency are Related to Improvements in Endurance Capacity Following Pulmonary Rehabilitation in COPD Patients
- Estimation of the Spontaneous Polarization of Hexagonal ZnS, CdS and ZnO Crystals
- Study of Inhomogeneous Radial Distribution of Defects in As-grown and Annealed Czochralski Silicon Crystals by Multi-chroic Infrared Light Scattering Tomography
- Effect of Molecular Weight of Polyethylene Glycols on Inactivation of Mycoplasma pulmonis and Acholeplasma laidlawii A
- Selection and propagation of antibiotic-resistant mutants of Acholeplasma by the addition of fresh culture medium containing antibiotics and protease to the medium cultured with Acholeplasma.
- Clinical manifestations of acute Coxsackie-B viral myocarditis and pericarditis with a special reference to serum enzyme patterns and long-term prognosis.
- Study of the Characteristics of Defects in the Oxidation-induced Stacking Fault-Ring Area in Czochralski Silicon Crystals by Multi-chroic Infrared Light Scattering Tomography and Transmission Electron Microscopy