New Interference Fringes Generated by Epitaxial Layers of Semiconductors and SIMOX (Oxygen-Ion-Implanted-Si) Wafers
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概要
- 論文の詳細を見る
Truly new interference fringes generated by SIMOX (oxygen-ion-implanted silicon) wafers and hetero-epitaxial layers of semiconductors were originally and clearly observed. Generation of the new fringes was caused by interference between a part of the incident light pencil reflected from the top surface of a specimen and the light scattered from the hetero-interface after refraction of the other part of the pencil. The reflection from the top surface is fairly large due to the very high refractive index (more than 25% at most semiconductor surfaces) and the intensity of light scattered from the interface is strong enough for it to act as a plane source with coherency.
- 社団法人応用物理学会の論文
- 1991-08-01
著者
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TOYODA Koichi
Laser Science Group, The institute of Physical and Chemical Research (RIKEN)
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Ogawa Tomoya
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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TAIJING Lu
Laser Science Group, Institute of Physical and Chemical Research Wako
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Taijing Lu
Laser Science Group Institute Of Physical And Chemical Research Wako
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Toyoda Koichi
Laser Science Group Institute Of Physical And Chemical Research Wako
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