A Proposal for Measurement of Implanted Ion Dose in Semiconductor Wafers by IR Light Scattering Technique : Semiconductors and Semiconductors Devices
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概要
- 論文の詳細を見る
It was confirmed here that the IR light scattering caused by ion-implanted regions of GaAs wafers was inversely proportional to the 4th power of the IR wavelength. The scattering power was increased with an increase in implanted ion dose when the acceleration voltage of the ions was kept constant, and the scattering was also increased with an increase in the voltage. From this evidence, tracks of the high energy ion particles, where atomic arrangement is locally disordered from the regular positions of atoms by collisions with the ions, act as Rayleigh scatterers, while the deformed volume of ion tracks is dependent upon the energy and species of implanted ions. Therefore, a new ion dose indicator will be designed using this principle for an in situ dose measurement of an implanter under operation.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Sakai Kazufumi
Department Of Mathematics And Physics National Defense Academy
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Ogawa Tomoya
Department Of Physics Gakushuin University
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Ogawa Tomoya
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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YAMADA Yutaka
Mitsubishi Kasei Corporation, Research Center
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Yamada Yutaka
Mitsubishi Kasei Corporation Research Center
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