A Comment on Defects in GaAs Crystals Observed by Infrared Light Scattering Tomography and IR Absorption Microscopy
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概要
- 論文の詳細を見る
Infrared light scattering and absorption due to electrons trapped by centers with a hydrogen-like structure are discussed and the following reported evidences are explained: (a) enhancement of IR scattering without clear change of IR absorption due to ingot annealing of GaAs crystals and (2) light scattering after bleaching of IR absorption in GaAs atlow temperature.
- 社団法人応用物理学会の論文
- 1986-11-20
著者
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Ogawa Tomoya
Department of Physics, Gakushiuin University
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Ogawa Tomoya
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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