Correlation between Infrared-Light Scattering and Absorption Images in an In-Doped LEC GaAs Crystal
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概要
- 論文の詳細を見る
Infrared light scattering tomography combined with infrared absorption imaging is developed for characterization of semi-insulating GaAs crystals to take simultaneously both the IR absorption and light scattering images. Very close correlation of many dislocation lines and point defects was found between these images in a semi-insulating In-doped LEC GaAs crystal grown from a stoichiometric melt, while a few dislocation lines showed only light scattering of 1.15 μm laser beam.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Ogawa Tomoya
Department of Physics, Gakushiuin University
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Ogawa Tomoya
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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