Scanning Tunneling Microscopy Study of Initial Growth of CaF_2 and BaF_2 on Si(111)
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概要
- 論文の詳細を見る
Scanning tunneling microscopy (STM) has been used to investigate nucleation and initial growth in the heteroepitaxies of calcium fluoride (CaF_2) and barium fluoride (BaF_2) on Si(111) surfaces in situ. The fluoride depositions and the STM measurements are performed at a substrate temperature of about 400'C. STM images clearly show that a BaF_2-deposited surface has a different morphology from that of CaF_2-deposited surface. Preferential nucleation and island growth of BaF_2 only occur at steps and domain boundaries on a 81(Ill)-7 × 7 reconstructed surface. On the other hand, CaF_2 islands nucleate not only at steps and domain boundaries but also in domain-boundary-free regions of a Si(111) surface. We attribute the difference in the morphologies to the much higher mobility and diffusion length of a BaF_2 molecule in comparison to those of a CaF_2 molecule on a Si(111) surface at 400℃. We also report the first STM measurement of a (CaF_2 + BaF_2)-coexisting surface at 480℃.
- 社団法人応用物理学会の論文
- 1996-08-15
著者
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MIURA Tatsuro
Department of Applied Physics, Graduate School of Engineering, Tohoku University
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Miura T
Department Of Electrical & Electronic Engineering Yamaguchi University
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SUMIYA Touru
Tanaka Solid Junction Project, Japan Science and Technology Corporation
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FUJINUMA Haruko
Tanaka Solid Junction Project, Japan Science and Technology Corporation
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MIURA Tadao
Tanaka Solid Junction Project, Japan Science and Technology Corporation
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TANAKA Shun-ichiro
Tanaka Solid Junction Project, Japan Science and Technology Corporation
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Tanaka Shun-ichiro
Tanaka Solid Junction Project Erato Japan Science And Technology Corporation
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Sumiya Touru
Tanaka Solid Junction Project Japan Science And Technology Corporation
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Fujinuma H
Tanaka Solid Junction Project Japan Science And Technology Corporation
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Tanaka Shun-ichiro
Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation
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