Influence of Interfaces on Crystal Growth of Si in SiO_2/a-Si/Si0_2 Layered Structures

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概要

• 論文の詳細を見る

• The crystal growth of Si in Si0_2/a-Si/Si0_2 layered strtuctvures is exarnined by high resolution transmission electron microscopy. In a thin a-Si layer (10 nm), crystal growth halts with the crystallite size roughly equal to the layer thickness. In a thick layer (50 nm), crystal growth continues beyond the layer thickness. An expression for this halt in growth is derived from the free energy change. The halt in growth of Si crystallites suggests that the a-Si/Si0_2 interface and the a-Si/c-Si interface are more stable than the c-Si/SiO_2 interface.

• 社団法人応用物理学会の論文
• 1997-06-15

著者

• Tagami Takashi

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

• Tanaka Shun-ichiro

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

• Wakayama Yutaka

  Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation,

• Wakayama Yutaka

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

• Wakayama Yutaka

  Molecular Architecture Project Jrdc

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• Nucleation and Growth Morphology in Heteroepitaxy of CaF_2 on Si(111) : a Study with Scanning Tunneling Microscopy
• Convergent Beam Electron Diffraction Measurement for Local Strain Distribution in Si around a NiSi2 Island
• Strain Distribution near Si/NiSi_2 Interface Measured by Convergent Beam Electron Diffraction
• Influence of Interfaces on Crystal Growth of Si in SiO_2/a-Si/Si0_2 Layered Structures
• Direct Observation of Ordered Bilayers in Cast Films of Double-Chain Ammonium Amphiphiles by Transmission Electron Microscopy
• Strain Effect on Electronic States of Si near a Si/NiSi_2 Interface Measured by Electron Nanoprobe Techniques

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