Nucleation and Growth Morphology in Heteroepitaxy of CaF_2 on Si(111) : a Study with Scanning Tunneling Microscopy

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概要

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• Scanning tunneling microscopy (STM) was used to investigate nucleation and growth phenomena in the hetero-epitaxy of calcium fluoride (CaF_2) on a Si(111) surface. CaF_2 was evaporated at room temperature on Si(111), and annealed to about 450℃. Subsequently, characteristically, shaped islands, with steps arranged in the [11^^-0] direction, were observed both on a terrace and a step edge of Si(111). After annealing this surface to about 600℃, STM images clearly showed that these islands underwent a structural transformation to well-ordered hetero-epitaxial layers which consisted of rows running along the [11^^-0] direction and grew from Si step edges. These findings show that at a high temperature the preferential nucleation sites are distributed on the Si step edges and that CaF_2 molecules have sufficient surface diffusion length to form the heteroepitaxial layers at the step edges.

• 社団法人応用物理学会の論文
• 1995-10-15

著者

• MIURA Tatsuro

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• Miura T

  Department Of Electrical & Electronic Engineering Yamaguchi University

• SUMIYA Touru

  Tanaka Solid Junction Project, Japan Science and Technology Corporation

• MIURA Tadao

  Tanaka Solid Junction Project, Japan Science and Technology Corporation

• TANAKA Shun-ichiro

  Tanaka Solid Junction Project, Japan Science and Technology Corporation

• Tanaka Shun-ichiro

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

• Sumiya Touru

  Tanaka Solid Junction Project Japan Science And Technology Corporation

• Tanaka Shun-ichiro

  Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation

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