Strain Effect on Electronic States of Si near a Si/NiSi_2 Interface Measured by Electron Nanoprobe Techniques

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概要

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• Lattice strains near the Si/NiSi_2 interface and their effects on electron energy-levels of Si were investigated via experimental and theoretical approaches. For highly spatially resolved analysis, electron nanoprobe techniques were employed: convergent beam electron diffraction (CBED) for lattice strain and electron energy-loss spectroscopy (EELS) for the electron energy-levels. Additionally, a theoretical analysis based on the density-functional theory (DFT) was performed to explain the experimental results. The actual distribution of the lattice strains was complicated; both tensile and compressive strains were found to coexist near the interface. Shifts in the Si L_<23>-edge of the EEL spectra were found to be induced by the lattice strain. Finally, we described the "distribution of the electron energy-levels" as the strain distribution around the interface in a submicron region.

• 社団法人応用物理学会の論文
• 1998-02-15

著者

• Tanaka Shun-ichiro

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

• Wakayama Y

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

• Wakayama Yutaka

  Tanaka Solid Junction Project Erato Japan Science And Technology Corporation

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• Strain Effect on Electronic States of Si near a Si/NiSi_2 Interface Measured by Electron Nanoprobe Techniques

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