Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-type Si
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概要
- 論文の詳細を見る
Deep level transtent spectroscopy study shows that in electron-beam-irradiated n-type Si, E1 level (O-V complex), E_2 level (double negative charge state of the divacancy) and E3 level (single charge state of the divacancy) are hardly annealed at as low a temperature as 120℃, while hydrogenation by boiling at 120℃ (2 atm) dramatically reduces the concentrations of these levels. A new level emerges near 0.33 eV below the conduction-band edge E_c after boiling, which may be a radiation-induced defect-hydrogen complex.
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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SUZUKI Takao
Department of Applied Physics, Tohoku University
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Tajima Kenji
Department Of Electrical Engineering Iwaki Meisei University
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Ohmura Yamichi
Department Of Electronic Engineering Iwaki Meisei University
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Ohmura Yamichi
Department Of Electrical Engineering Iwaki Meisei University
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Hayakawa Chiyuki
Department of Electrical Engineering, Iwaki Meisei University
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Hayakawa Chiyuki
Department Of Electrical Engineering Iwaki Meisei University
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Suzuki Takao
Department Of Applied Physics Tohoku University
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Suzuki Takao
Department Of Anatomical Science Hirosaki University Graduate School Of Medicine
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SUZUKI Takao
Department of Agricultural Chemistry, Tokyo University of Agriculture
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