Pressure Dependence of Resistivity in p-Type Germanium

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1994-04-15

著者

• Ohmura Yamichi

  Department Of Electrical Engineering Iwaki Meisei University

• Ohmura Yamichi

  Department Of Electronic Engineering Iwaki-meisei University

関連論文

• Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-type Si
• Pressure Dependence of Resistivity in p-Type Germanium
• Comment on "Second-Order Piezoresistance Coefficients of n-Type Silicon"
• Third-Order Piezoresistance Coefficients in p-Type Si
• Piezoresistance Effects Associated with Hydrostatic Pressure in p-Type Ge
• Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors
• Role of the Valence Band Density of States in the Piezoresistance of p-Type Semiconductors Si and Ge
• Numerical Study of the Piezoresistance Effect in p-Type Si

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