Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors

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概要

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• It has been shown, by tensor property and crystallographic symmetry considerations, that there are 70 independent nonzero components in the fourth-order piezoresistance coefficients in cubic conductors. For cubic semiconductors such as Si and Ge or GaAs, which crystallize in diamond (O_h) or zincblende (T_d) structures, respectively, these 70 nonzero components reduce to 42 components. The fourth-order piezoresistance coefficients for several current and stress directions have been shown in terms of these 42 components. Relevant quantities such as the pressure coefficients of resistivity are discussed.

• 社団法人応用物理学会の論文
• 2000-06-15

著者

• Ohmura Yamichi

  Department Of Electrical Engineering Iwaki Meisei University

• MORINAGA Wataru

  Department of Electronic Engineering, Iwaki Meisei University

• Morinaga Wataru

  Department Of Electronic Engineering Iwaki Meisei University:(present Address)lsi Logic Japan Semico

関連論文

• Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-type Si
• Pressure Dependence of Resistivity in p-Type Germanium
• Comment on "Second-Order Piezoresistance Coefficients of n-Type Silicon"
• Third-Order Piezoresistance Coefficients in p-Type Si
• Piezoresistance Effects Associated with Hydrostatic Pressure in p-Type Ge
• Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors
• Role of the Valence Band Density of States in the Piezoresistance of p-Type Semiconductors Si and Ge
• Numerical Study of the Piezoresistance Effect in p-Type Si

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