Third-Order Piezoresistance Coefficients in p-Type Si

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概要

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• By tensor property and crystallographic symmetry considerations, it has been shown that there are 20 independent nonzero components of the third-order piezoresistance (TOPR) coefficients (π_3) for cubic semiconductors which crystallize in diamond (O_h) or zincblende (T_d) structures. Piezoresistances for p-type Si obtained from conductivities calculated for sixfold degenerate valence bands with and without stress are highly nonlinear so that they are more suitably expressed with up to the fifth-order (π_5) stress terms than merely with up to the π_3 term for the odd-order stress terms. For several current and uniaxial stress directions, TOPRs are given in terms of 20 components of TOPR coefficients, and calculated π_3's which are obtained using up to the third-order stress term correspond in the order of magnitude with experimental ones.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• Ohmura Y

  Iwaki Meisei Univ. Fukushima Jpn

• Ohmura Yamichi

  Department Of Electrical Engineering Iwaki Meisei University

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• Piezoresistance Effects Associated with Hydrostatic Pressure in p-Type Ge
• Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors
• Role of the Valence Band Density of States in the Piezoresistance of p-Type Semiconductors Si and Ge
• Numerical Study of the Piezoresistance Effect in p-Type Si

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