Numerical Study of the Piezoresistance Effect in p-Type Si

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概要

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• Piezoresistance (PR) of p-type Si, consistent with experimental ones, has been ob-tained by numerically calculating the conductivity for the degenerate valence bandswith and without stress. Small stress coefficients for total bands and even each bandwell fulfil the symmetry relationship for the PR coefficient in the cubic crystal. It isfound that the mobility of each hole linearly changes with stress, while the carrier con-centratuon change is of the second order in stress. This leads to a conclusion that theprincipal mechanism of PR in 7t-type Si is the stress proportional mobility change ofholes, the carrier redistribution effect which is the mechanism for many valleysemiconductors being ruled out. Experimental temperature dependence of a PRcoefficient which exhibits (1 / T )-like and saturation behaviors is also explained interms of that of mobility change of holes. It has been suggested that deviation ofenergy dependent hole conductivity masses from bulk hole masses may be responsiblefor hole mobility change.

• 社団法人日本物理学会の論文
• 1992-01-15

著者

• Ohmura Yamichi

  Department Of Electronic Engineering Iwaki Meisei University

• Ohmura Yamichi

  Department Of Electrical Engineering Iwaki Meisei University

関連論文

• Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-type Si
• Pressure Dependence of Resistivity in p-Type Germanium
• Comment on "Second-Order Piezoresistance Coefficients of n-Type Silicon"
• Third-Order Piezoresistance Coefficients in p-Type Si
• Piezoresistance Effects Associated with Hydrostatic Pressure in p-Type Ge
• Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors
• Role of the Valence Band Density of States in the Piezoresistance of p-Type Semiconductors Si and Ge
• Numerical Study of the Piezoresistance Effect in p-Type Si

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