CMOSイメージセンサにおける低電圧駆動埋込みPDの解析 : 埋込みPD構造による低リーク電流の検討(<論文特集>イメージセンシング技術)

概要

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A CMOS image sensor with a very-low-leakage photodiode and a low-voltage buried photodiode has been developed that has sensitivity comparable to that of conventional CCD images. Photodiode leakage current caused by stress originates in the surface damage and in the dislocations and defects near the local oxidation of silicon. Use of a dislocation-free stress-release process and of a buried photodiode reduced the damage and eliminates the stress. A 1/4-inch 330 K-pixel CMOS image sensor using this buried photodiode structure and a sensor-specified process had a low dark current of 0.1 nA/cm^2 in 5.6 μm pixels. The buried photodiode can operate in complete chatge-transfer mode at voltage as low as 3.3 V, thereby suppressing the image lag and FPN of the photodiode.
社団法人映像情報メディア学会の論文
2001-02-20