高感度512×512画素PtSiイメージセンサ : 情報入力

概要

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An improved 512x512-element PtSi Schottky-barrier infrared image sensor (512x512 IRCSD) has been developed by using the charge sweep device (CSD) readout architecture and 1.2 μm minimum design rules. A large fill factor of 71% is achieved in spite of a small pixel size of 26μm x 20μm. At the Schottky-barrier detector reset voltage of 4V, the differential temperature response with f/1.2 optics at 300K and saturation signal level were 3.2x10^4 electrons/K and 2.9xl0^6 electrons, respectively. The NETD was estimated as 0.033K with f/1.2 optics at 300K. This 512x512 IRCSD was designed to be operated in either the field or frame integration interlace modes for versatility.
社団法人映像情報メディア学会の論文
1994-03-04