512×512画素GeSi/Siヘテロ接合赤外線検知素子

概要

論文の詳細を見る
We have developed a monolithic 512×512-element GeSi/Si heterojunction infrared image sensor. Its operating mechanism is the same as that of the PtSi/Si Schottky-barrier detector. We fabricated the GeSi/Si heterojunction by molecular beam epitaxy and confirmed that ideal strained GeSi filmms were grown on Si substrates. We evaluated the dependencies of the spectral responsivity on the Ge composition, impurity concentration, and GeSi thickness, and optimized them for 8-12 γm infrared detection. The sensor has a pixel size of 34×34 γm^2 and a fill factor of 59%. A low noiseequivalent temperature difference of 0.08 K (f/2.0) was obtained at a background of 300 K with a very small responsivity dispersion of 2.20%.
社団法人映像情報メディア学会の論文
1999-06-20