窒素添加によるCZ-Si結晶のgrown-in欠陥挙動(<小特集>シリコン結晶成長における酸素輸送と欠陥制御)

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We present the effect of nitrogen doping on the formation of grown-in defects and on the behavior of oxygen precipitate. By nitrogen doping, the morphology of voids becomes plate shape triclinic and the size of voids decreases (nitrogen concentration 〜10^<14> atoms/cm^3), while the oxygen precipitates are already existent at grown-in state with high volume density (nitrogen concentration >2×10^<15> atoms/cm^3) . The oxygen precipitate density after heat treatment shows constant value and is in-dependent of heat treatment temperature in nitrogen doped crystals. Implications for the mechanism of nitrogen doping effects are discussed.
2000-01-28