バイアス処理による高配向ダイヤモンドの核発生(<小特集>カーボン)

概要

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A Highly oriented diamond film was synthesized on an Si(100) substrate by bias-enhanced microwave plasma chemical vapor deposition (MPCVD). The substrate was carburized prior to the biasing. This treatment did not change the surface morphology of the substrate but was indispensable for oriented nucleation of diamond. The MPCVD with a negative bias rapidly changed the flat substrate surface to a mesh structure that was strongly sensitive to plasma and bias conditions. RHEED and cross-sectional TEM examinations revealed that β-SiC was fromed epitaxially on the Si surface. 0riented diamond particles were deposited on the top of the mesh structure. The mesh structure was connected to formation of anti-phase domain boundary in the epitaxial β-SiC layer. Further improvement of orientation and quality of epitaxial SiC layer will lead to formatiion of extreamly oriented diamond film.
日本結晶成長学会の論文
1995-09-25