2810 カーボンナノチューブの電界誘起成長とそのプローブ顕微鏡への応用

概要

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It is found that the application of negative substrate bias enhances the growth of the carbon nanotubes in hot-filament chemical vapor deposition. This growth enhancement effect is applied to synthesize an individual carbon nanotube on the apex of silicon tip scanning probe microscopy. The silicon tip of the probe for the scanning probe microscopy is coated with 5nm tick thin film by spattering. Carbon nanotube is grown on the top of the tip by the deposition under the sample bias of -300V. It is demonstrated that the silicon probe grown a carbon nanotube exhibits a high resolution in SPM imaging. Similar experiments are performed on faced silicon electrodes with a narrow gap where a voltage of 30V is applied between the electrodes during the growth. Carbon nanotube grown from negatively biased electrode forms a freestanding bridge structure between the electrodes.
一般社団法人日本機械学会の論文
2002-09-20