単結晶育成過程における応力と転位分布パターンの比較

概要

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rights: 本文データは社団法人日本機械学会の許諾に基づきCiNiiから複製したものであるThe thermal stress during growth and the residual stress after growth in a Czochralski-grown crystal are calculated numerically for three kinds of growth conditions by using an isotropic ther-moelastic model. The maximum stress which the crystal experiences is obtained from the thermal and residual stress histories. The cross-sectional patterns of the total of twelve resolved shear stresses and the resolved shear stress direction patterns are shown for the [100] and [111] grown crystals. It is found that the features resulted from the maximum stress distribution and the resolved shear stress direction patterns agree well qualitatively with the dislocation density and array patterns observed in GaAs and InP single crystals.
一般社団法人日本機械学会の論文
1992-05-25