液体封止法で育成される単結晶の応力

概要

論文の詳細を見る
rights: 本文データは社団法人日本機械学会の許諾に基づきCiNiiから複製したものであるThe thermal stress during pulling and the residual stress after pulling in a single crystal grown by the liquid-encapsulated Czochralski (LEC) technique are analyzed by a new method which changes the numerical solution of temperature to a theoretical one through the use of the least squares method. The method is proven to be valid. The thermal effect of the liquid encapsulant on the maximum stress which the crystal undergoes during the growth process is investigated. It is found that the cross-sectional pattern of a total of twelve resolved shear stresses and the resolved shear stress direction pattern obtained from the maximum stress agree qualitatively with the dislocation density and array patterns.
一般社団法人日本機械学会の論文
1993-04-25