活性化反応蒸着法によるPbTiO_3薄膜の作製 : 合成・キャラクタリーゼーション

概要

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PbTiO_3 thin films were prepared by activated reactive evaporation; (ARE) through controlling evaporation rates of Pb and Ti, O_2 pressure, and substrate temperature. The Pb/Ti ratio of these films depended on the evaporation rate of Ti. When the substrate temperature and O_2 pressure were held at 600℃ and 1.6 × 10^<-4> Torr respectively, the optimum evaporation rates of Ti and Pb for a nearly stoichiometric PbTiO_3 film were 0.2 and 1.2-1.8Å/s, respectively. PbTiO_3 films deposited on a c-plane of sapphire showed preferred orientation of (111) plane, and those on (100) plane of MgO showed strong c-axis orientation. AES depth profile measurements and SEM observations indicated that these films were uniform in composition and dense.
社団法人日本セラミックス協会の論文
1990-08-01