メスバウアー分光法によるエピタキシャルFe3O4薄膜の表面及び界面層の研究

概要

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Stoichiometric Fe3O4 films have been epitaxially formed on both α-Al2O3 and MgO single-crystalline substrates by a reactive vapor deposition method. A few-Å-thick probe layer containing 57Fe was formed at a desired depth of an inactive 56Fe3O4 matrix film to apply a depth selective Mössbauer spectroscopy. Even at the topmost layer and also at the interface, the electronic state retained the essential features of Fe3O4 bulk so that the Verwey transition was clearly detected. Any minor depth-dependent changes in electronic state were confined in a few outermost atomic layers. The nature of the changes depended on the orientation of the films and the lattice mismatch between the substrate and the film.
社団法人粉体粉末冶金協会の論文