水熱合成法によるBa(Ti_<1-x>Zr_x)O_3薄膜の作製と電気特性

概要

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Ba(Ti_<1-x>Zr_x)O_3 thin films have been synthesized on the titanium substrates at 160℃ by hydrothermal method. The surface roughness (R_a) of the film was 0.096μm. The molar ratio of Zr/Ti of the film analyzed by EDS was 0.25/0.75. The film microstructure depended strongly on both starting materials and KOH concentration. The grain size became larger from approximately 0.6 to 1μm with increasing KOH concentration from 1×10^<-3> to 3.5×10^<-3> mol・m^<-3> at an aqueous solution of 7.8×10^<-5> mol・m^<-3>. The Ba(Ti_<0.75>Zr_<0.25>)O_3 thin film synthesized in an aqueous solution of 7.8×10^<-5> mol・m^<-3> containing 3.5×10^<-3> mol・m^<-3> KOH showed a dielectric constant of about 426 and dielectric loss of about 0.077 at 1kHz. The transition point between the ferroelectric and paraelectric phases of the film heat-treated at 300℃ for 0.5h was approximately 10℃.
社団法人日本セラミックス協会の論文
2002-06-01