ゾル・ゲル法によるチタン酸バリウム膜の作製と誘電的性質 : 合成・キャラクタリーゼーション

概要

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Crack-free and dense BaTiO_3 films with perovskite structure were obtained at temperature as low as 500℃ by the sol-gel process. Barium acetate and tetra-n-butyl orthotitanate were used as raw materials. Glycerol and methanol were used as solvent. The films were deposited on: several types of substrates. ICP analysis showed that the Ba/Ti ratio in BaTiO_3 films agreed with that of starting mixtures. Films obtained at 1000℃ on a platinum substrate showed a typical P-E hysteresis loop. The spontaneous polarization was 2.3μC・cm^<-2>, the remanent polarization was 2.3μC・cm^<-2> and the coercive filed was 2.8 kV・cm^<-1>. Dielectric constant and dielectric loss angle were about 1000 and 0.035, respectively.
社団法人日本セラミックス協会の論文
1990-08-01